A study of the temperature dependence of adsorption and silicidation kinetics at the Mg/Si(111) interface

Galkin KN; Kumar M; Govind; Shivaprasad SM; Korobtsov V; Galkin NG

Thin Solid Films, Vol.515, No.22, 8192-8196, 2007

DOI10.1016/j.tsf.2007.02.041 Export Citation

A study of the temperature dependence of adsorption and silicidation kinetics at the Mg/Si(111) interface

Galkin KN, Kumar M, Govind, Shivaprasad SM, Korobtsov V, Galkin NG

The adsorption studies of magnesium on Si(111) substrate have been performed using AES, LEED and EELS at various substrate temperatures. It is observed that the sticking coefficient of magnesium on the silicide surface is close to zero for temperatures greater than 100 degrees C. It has been shown that the magnesium silicide grows as continuous films on Si substrate at temperature 100-140 degrees C, while for temperatures higher than 170 degrees C the magnesium silicide grows in the form of islands. (c) 2007 Elsevier B.V. All rights reserved.

Keywords:magnesium;silicon;magnesium silicide;adsorption;electron energy loss spectroscopy