Ga- or In-doped BaSi2 films were grown on Si(III) by molecular beam epitaxy (MBE). The Ga-doped BaSi2 showed n-type conductivity. The electron concentration and resistivity of the Ga-doped BaSi2 depended on the Ga temperature; however, the electron concentration and resistivity could not be controlled properly. In contrast, the In-doped BaSi2 showed p-type conductivity and its hole concentration was controlled in the range between 10(16) and 10(17) cm(-3) at RT. (c) 2007 Elsevier B.V. All rights reserved.