The compositionally graded BiScO3-PbTiO3 (BSPT) thin films were fabricated on Pt/Ti/SiO2/Si by a sol-gel method. For the up-graded thin film, the PbTiO3 content increased from the film-substrate interface to the surface of the film, while the down-grade thin film showed the opposite trend. The graded thin films exhibited single-phase structures and dense microstructures. The dielectric and ferroelectric properties of the thin films were investigated. The results showed that the compositionally graded BSPT thin films had similar remanent polarization value but a higher dielectric constant, dielectric tunability, and piezoelectric coefficient d(33) compared with the homogeneous thin film with a composition of 0.36BiScO(3)-0.64PbTiO(3) at the morphotropic phase boundary.