The effect of a 20-nm thick TiO2 seeding layer on the growth of a Bi3.15Nd0.85Ti3O12 (BNT) thin film on Pt(111) thin-film substrates has been studied. Under otherwise identical deposition process conditions, the BNT film could be turned from a highly random orientation to a (200) preference orientation by adding the seeding layer. Field-emission scanning electron microscope result reveals that the BNT thin film with the TiO2 seeding layer is composed of fine grains with smaller sizes about 80-150 nm in diameter. The P-r and E-c values of the BNT thin film and BNT film with the TiO2 seeding layer were 36 and 16 mu C/cm(2), and 96.9 and 92 kV/cm at a voltage of 12 V, respectively. The fatigue test exhibited a very strong fatigue endurance up to 10(9) cycles for both films. The leakage current densities were generally in the order of 10(-6)-10(-5) A/cm(2) for both samples.