In this paper, we report, for the first time, the fabrication and characterization of Si/SiGe doped-channel field-effect transistors (DCFETs) using inductively coupled plasma (ICP) dry etching process. Because ICP can generate high-density plasma under low pressure, independently control plasma density as well as ion bombardment energy, a better anisotropic etching profile and the almost elimination the parasitic current path between isolated devices can be obtained. Experimental results show that the doped-channel FET using ICP mesa have higher breakdown voltage, lower leakage current, higher transconductance, and larger current drivability as compared to device fabricated using wet mesa etching. (c) 2007 Elsevier B.V. All rights reserved.