This study investigates structural modifications of the conventional TFT, which is suffers from the short-channel effect in advanced applications. An ideal body-block poly-Si thin-film transistor is successfully fabricated for the first time at a level that achieves high performance characteristics. The output characteristics of the body-block TFT, for instance, the low output conductance in the saturation area and high breakdown voltage, achieve an outstanding improvements compared to a conventional TFT. The poly-Si thin-film treatments of the body-block TFT with NH3 diffusion or body implantation, and their corresponding performance effects, have also been investigated and discussed in depth. (c) 2007 Elsevier Ltd. All rights reserved.