Film properties of nitrogen-doped polycrystalline silicon for advanced gate material

Sang Ho Woo; Yil Wook Kim; Pyung Yong Um; Hae-Min Lee; Chang-Koo Kim

Korean Journal of Chemical Engineering, Vol.26, No.3, 824-827, May, 2009

DOI10.1007/s11814-009-0137-3 Export Citation

Film properties of nitrogen-doped polycrystalline silicon for advanced gate material

Sang Ho Woo, Yil Wook Kim¹, Pyung Yong Um¹, Hae-Min Lee, and Chang-Koo Kim^†

Department of Chemical Engineering and Division of Energy Systems Research, Ajou University, San 5 Woncheon-dong, Yeongtong-gu, Suwon 443-749, Korea
¹Eugene Technology Co. Ltd., 209-3 Chuge-ri, Yangji-myun, Yongin 449-824, Korea

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Deposition of N-doped poly-Si films from SiH4 and NH3 using a single wafer type low pressure chemical vapor deposition (LPCVD) system was investigated to improve the grain size reduction and the grain size distribution. The deposition rate and surface roughness of N-doped Si were greatly affected by the NH3/SiH4 ratio such that they decreased with increasing NH3/SiH4 ratio. X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements revealed that with increasing NH3/SiH4 ratio, the size of the grains was decreased and the grains size distribution became uniform. Finally, we successfully obtained N-doped poly-Si films having uniform grain size of approximately 6 nm.

Keywords:N-doped Si;Low Pressure Chemical Vapor Deposition;Grain Size;Surface Roughness

[References]

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Song YS, Chung CW, Korean J. Chem. Eng., 20(6), 1138 (2003)
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[Related Articles]

[1] Luoh T, Han TT, Yang YC, Chen KC, Shih HH, Hwang YL, Hsueh CC, IEEE Trans. Semicond. Manuf., 16, 155 (2003)

[2] Song YS, Chung CW, Korean J. Chem. Eng., 20(6), 1138 (2003)

[3] Mori S, Yamaguchi Y, Sato M, Meguro H, Tsunda H, Kamiya E, Yoshikawa K, Arai N, Sakagami E, IEEE Trans. Electron Devices, 43, 47 (1996)

[4] Nkansah FD, Hatalis M, IEEE Trans. Electron Devices, 46, 1355 (1999)

[5] Muramatsu S, Kubota T, Nishio N, Shirai H, Matsuo M, Kodama N, Horikawa M, Saito S, Arai K, Okazawa T, IEDM Tech. Dig., 847 (1994)

[6] Togo M, Suzuki T, Hasegawa E, Koyama S, Fukai T, Sakakidani A, Miyake S, Watanabe T, Yamamoto I, Tanaka M, Kawashima Y, Kunimune Y, Ikeda M, Imai K, 2006 Symp. VLSI Tech. Dig. Technical Papers, 30 (2006)

[7] Um PY, Korean patent, 10-2004-0063047 (2004)

[8] Farrow RFC, J. Electrochem. Soc., 121, 899 (1974)

[9] Temple-Boyer P, Jalabert L, Masarotto L, Alay JL, Morante JR, J. Vac. Sci. Technol. A, 18(5), 2389 (2000)

[10] Scheid E, Kouassi LK, Henda R, Samitier J, Morante JR, Mater. Sci. Eng. B, 17, 72 (1993)

[11] Cullity BD, in Elements of X-ray diffraction, Cohen M, Editor, Addison-Wesley, Reading, MA (1978)