Journal of Crystal Growth, Vol.310, No.2, 501-507, 2008
Simulation of dislocation density: Global modeling of bulk crystal growth by a quasi-steady approach of the Alexander-Haasen concept
A global model for the simulation of dislocation density in the bulk growth of crystals is presented. The model is two-dimensional and quasi-steady; it is based on the original concept of Alexander and Haasen [Solid State Phys. 22 (1968) 27]. The model is validated by experimental results obtained from various growth techniques (LEC, VCz and VGF) with GaAs and InP crystals ranging up to diameters of 6 ''. (C) 2007 Elsevier B.V. All rights reserved.