화학공학소재연구정보센터
Journal of Crystal Growth, Vol.310, No.4, 789-793, 2008
Preparation of SrMoO4 thin films on Si substrates by chemical solution deposition
Crystallized SrMoO4 thin films were prepared on (1 0 0)-oriented Si substrates by chemical solution deposition (CSD) method. The effects of the processing parameters on the growth of the films were investigated. Dense scheelite-type SrMoO4 thin films could be prepared when calcined between 350 and 800 degrees C. The absorption band related to vibration mode of MoO42- tetrahedra in Fourier transform infrared (FT-IR) spectra of SrMoO4 thin films annealed at 350-900 degrees C was observed that undoubtedly confirmed the appearance of SrMoO4 phase. The results showed that CSD method could be used to prepare SrMoO4 thin films at rather low temperatures. (C) 2007 Elsevier B.V. All rights reserved.