The Ge1-xTex chalcogenide thin films for phase change memory applications were prepared on TiAlN (30 nm)/SiO2 (100 nm)/Si substrates by metallorganic chemical vapor deposition (MOCVD) using Ge(allyl)(4)(Ge(C3H5) 4),Sb(iPr)(3)(Sb(C3H7)(3)), and Te(tBu)(2)(Te(C4H9)(2)) precursors. The Ge1- xTex films were grown by the tellurium deposition at 230-250 degrees C on Ge films deposited on a TiAlN electrode in the presence of Sb at 370 degrees C. The Ge1- xTex film growth by the tellurium deposition on Ge films depends on both the tellurium deposition temperature and the deposition time. The Ge and Te in the films deposited on a confined structure of 500 nm in diameter and 200 nm in depth shows a homogeneous distribution, and their distribution was consistent with the films deposited on a planar structure. (c) 2007 The Electrochemical Society.