Amorphous CoWP films have been studied as a capping or diffusion barrier layer to reduce Cu electromigration. However, the interface characterizations between the CoWP and Cu films have not been clarified. Thus, in this study, CoWP and Cu films are deposited by electroless plating, and their thermal stability and interface diffusion behaviors are investigated. By the activation of nanoscaled Pd catalysts, a continuous amorphous CoWP layer is obtained with stable concentrations of 82.5 atom % Co, 5.5 atom % W, and 12.0 atom % P, and then a smooth crystalline Cu film is directly deposited on the CoWP layer. Under thermal annealing at 500 degrees C, the CoWP layer remains an amorphous structure. and no obvious interdiffusion between the Cu and CoWP films is found. The electrical resistivity of the CoWP layer and CoWP/Cu bilayer decreases to the lowest values of 35 and 3.3 mu Omega cm, respectively. However with increasing annealing temperature to 600 degrees C, crystallization of the amorphous CoWP occurs, and much severe interdiffusion between the Cu and CoWP films is observed. (C) 2008 The Electrochemical Society.