Using a novel growth technique called reactive bias target ion beam deposition, the authors have prepared highly oriented VO2 thin films on Al2O3 (0001) substrates at various growth temperatures ranging from 250 to 550 degrees C. The influence of the growth parameters on the rnicrostructure and transport properties of VO2 thin films was systematically investigated. A change in electrical conductivity of 10(3) was measured at 341 K associated with the well known metal-insulator transition (MIT). It was observed that the MIT temperature can be tuned to higher temperatures by mixing VO2 and other vanadium oxide phases. In addition, a current/electric-field induced MIT was observed at room temperature with a drop in electrical conductivity by a factor of 8. The current densities required to induce the MIT in VO2 are about 3 X 10(4) A/cm(2). The switching time of the MIT, as measured by voltage pulsed measurements, was determined to be no more than 10 ns. (C) 2008 American Vacuum Society