An overview about process window evaluation and characteristic features of photoresists for e-beam/optical hybrid lithography as well as mix and match applications and implementation into new integration concepts is given. For that, several commercially available deep ultraviolet (DUV) (248 nm), ArF (193 nm), and e-beam resist samples from various suppliers were exposed at Qimonda's dynamic random access memory pilot line environment using both e-beam and optical exposure. Due to the diverse, sometimes contradictory requirements and properties of the different material platforms (e.g., resolution, sensitivity, vacuum stability, etch resistance, etc.), a unique material for true hybrid lithography is difficult to find. At least the tested DUV resist is limited applicable for e-beam exposures putting up with low e-beam sensitivity. (c) 2007 American Vacuum society.