Level set methods have previously been successfully implemented in interface propagation for etching and deposition processes. In this article, the authors show that level set methods can be used to model solid phase epitaxial regrowth. The model incorporates orientation dependence of regrowth as found by Csepregi [J. Appl. Phys. 49, 3906 (1978)]. The orientation dependent velocity data are taken from Csepregi's paper and fitted to a polynomial function to give the growth velocity for level set methods. Simulations show the capability of our model in predicting the pinching of the corners in < 111 > direction and humplike shape in < 100 > direction. This is confirmed by the transmission electron microscope pictures from recent papers. This modeling holds special interest because of the different diffusivities of boron in amorphous and crystalline silicon (approximately five orders of magnitude difference) and because of the various defects forming at the pinching corners which could lead to higher leakage current in scaled devices. The level set model is implemented in FLOOPS. (C) 2008 American Vacuum Society.