Quantitative carrier concentration profiles of super-junction power metal-oxide-semiconductor field-effect transistor devices were obtained by resonant electron tunneling (RET) scanning probe spectroscopy making use of a discrete energy level of adsorbed C-60 molecules. RET voltage profiles measured on oxidized (100) surfaces of fine-polished cross sections revealed the presence of separated p-type islands in the n-type epitaxial layer and agreed well with the profiles obtained by local work function spectroscopy, although fluctuations were observed owing to surface defects and variations in the oxide and C-60 film thickness. The derived boron concentration coincides with the implanted boron density obtained by numerical simulations. These results verify that the C-60 RET scanning probe spectroscopy on oxidized surfaces has the ability of quantitative carrier concentration profiling of Si device cross sections, if flat surfaces with good quality are prepared. (c) 2008 American Vacuum Society.