Oxygen-impurity boron-doped hydrogenated microcrystalline silicon (p-mu c-Si:O-x:H) films have been deposited using catalytic chemical vapor deposition (Cat-CVD). Pure silane (SiH4), hydrogen (H-2) oxygen (O-2), and diluted diborane (B2H6) gases were used. The tungsten catalyst temperature (T-fil) was varied from 1900 to 2100 degrees C and films were deposited on glass substrates at temperatures of 100 to 300 degrees C. Different catalyst-to-substrate distances were employed and single- or double-coiled filaments were used. In addition to p-mu c-Si:O-x:H deposition, we have also deposited conventional p-type microcrystalline silicon (p-mu c-Si:H) in order to compare their electrical and optical properties to p-mu c-Si:O-x:H. (C) 2007 Elsevier B.V. All rights reserved.