The formation of various uncommon shaped voids along with regular triangular and square voids in the epitaxial 3C-SiC films on Si has been investigated by optical microscopy and atomic force microscopy. Heteroepitaxial growth of 3C-SiC films on Si (001) and (111) substrates has been performed using hexamethyldisilane in a resistance-heated chemical vapor deposition reactor. The influence of the orientation of the Si substrate in determining the shape of the voids has clearly been observed. In addition, the growth period and the growth-temperature have been considered as the major parameters to control the size, density and shape of the voids. Generally, voids are faceted along {111} planes, but depending upon growth conditions, other facets with higher surface energy have also been observed. Finally the size and density of the voids are remarkably reduced, by suitable growth technique. (c) 2007 Elsevier B.V. All rights reserved.