Amorphous ZnO-SnO2-In2O3 films were grown by direct current magnetron sputtering from vacuum hot pressed ceramic oxide targets of Zn: In:Sn cation ratios 1:2:1 and 1:2:1.5 onto glass substrates. X-ray diffraction analysis showed that the microstructure remained amorphous during annealing at 200 degrees C for up to 5 hours. By monitoring the electrical resistivity, oxygen content and substrate temperature were optimized during deposition. The optimal films were characterized by Hall Effect, work function and optical spectroscopy measurements. Films of 1:2:1 composition showed the lowest resistivity (7.6 x 10(-4) Omega-cm), when deposited onto substrates preheated to 300 degrees C. Transmissivity of all films exceeded 80% in the visible spectral region. The energy gap was 3.52-3.74 eV, and the work function ranged 5.08-5.22 eV, suitable for cathode applications in organic light emitting diodes. Overall, the film characteristics were comparable or superior to those of amorphous tin-doped indium oxide and zinc-doped indium oxide films and may serve as viable, lower-cost alternatives. (c) 2007 Elsevier B.V. All rights reserved.