Results are reported for YbFe4Sb12 thin films grown by pulsed laser deposition. Thick films (thickness 1000 angstrom) show electrical transport behavior typical of bulk specimens. A metal to insulator transition is observed for films with thickness <1000 angstrom. The low temperature electrical resistivity data for weakly insulating samples follow a power law (rho(T) similar to T-beta) and a stretched exponential (rho(T) similar to exp[T-1/T](x)) for strongly insulating samples. A comparison of electrical resistivity to scanning electron microscope images indicates a correlation between the metal to insulator transition and the intergranular connectivity. Based on this result it is argued that the intergrain conductance governs the metal to insulator transition. (c) 2007 Elsevier B.V. All rights reserved.