An Aurivillius phase bismuth layer-structured compound potassium bismuth titanate is synthesized using conventional solid-state processing. It was found that the range of sintering temperature for the potassium bismuth titanate is very narrow. Phase analysis was performed by X-ray diffraction, and microstructural morphology was assessed by scanning electron microscopy. The Curie temperature T-C, piezoelectric coefficient d(33), and mechanical quality factor Q(m) (k(p) mode) of the dense potassium bismuth titanate were found to be 555 degrees C, 21.2 pC/N, and 1602, respectively. Dielectric spectroscopy showed that potassium bismuth titanate possesses stable high-temperature dielectric properties.