A novel positive-tone molecular resist possessing oxabenzonorbornadiene moiety was developed for electron-beam (EB) lithography. The synthesized resist material showed relatively high glass transition temperature and readily formed uniform amorphous films on a siliconwafer. The sensitivity of an EB resist was ca. 8 mu C . cm(-2) and line and space patterns of 200 nm could be fabricated. The promising feature of the resist materials is that no outgassed products from base matrixes are theoretically produced under the exposure and post-exposure bake procedure.