A novel SiGe-S/D structure for high performance pMOSFET called two-step recessed SiGe-source/drain (S/D) is developed with careful optimization of recessed SiGe-S/D structure. With this method, hole mobility, short channel effect and S/D resistance in pMOSFET are improved compared with conventional recessed SiGe-S/D structure. To enhance device performance such as drain current drivability, SiGe region has to be closer to channel region. Then, conventional deep SiGe-S/D region with carefully optimized shallow SiGe SDE region showed additional device performance improvement without SCE degradation. As a result, high performance 24 nm gate length pMOSFET was demonstrated with drive current of 451 mu A/mu m at vertical bar V-dd vertical bar of 0.9 V and I-off of 100 nA/mu m (552 mu A/mu m at vertical bar V-dd vertical bar of 1.0 V). Furthermore, by combining with V-dd scaling, we indicate the extendability of two-step recessed SiGe-S/D structure down to 15 nm node generation. (C) 2007 Elsevier Ltd. All rights reserved.