We propose a novel method for high-throughput quantitative analysis of thin-film conductivity sigma by using a scanning microwave microscope (S mu M). We demonstrated that composition spread thin films of Ti1-xNbxO2 can be utilized as a standard reference in a wide s range. The shift in Q-value measured by SmM along the composition-spread axis showed a single peak, which moved to the lower x side with film thickness. This behavior was confirmed by electrical field simulation using the finite element method. (C) 2007 Published by Elsevier B.V.