To reveal the influence of erbium interlayer on the formation of nickel silicide and its contact properties on Si substrate, Er(0.5-3.0 nm) and Ni(20 nm) are successively deposited onto Si(1 0 0) substrate and are treated by rapid thermal annealing in pure N-2 ambient. The NiSi formation temperature is found to increase depending on the Er interlayer thickness. The formation temperature of NiSi2 (700 degrees C is not influenced by Er addition. But with 2 nm Er interlayer, the formed NiSi2 is observed textured with preferred orientation of (1 0 0). During the formation of NiSi, Er segregates to the surface and little Er remains at the NiSi/Si(1 0 0) interface. Therefore, the Schottky barrier height of the formed NiSi/n-Si(1 0 0) contact is measured to be 0.635 similar to 0.665 eV which is nearly invariable with different Er addition. (C) 2007 Elsevier B.V. All rights reserved.