Two groups of Mo/Si films were deposited on surface of Si( 1 0 0) crystal. The first group of the samples was prepared by both ion beam assisted deposition (IBAD) and metal vapor vacuum arc (MEVVA) ion implantation technologies under temperatures from 200 to 400 degrees C. The deposited species of IBAD were Mo and Si, and different sputtering Ar ion densities were selected. The mixed Mo/Si films were implanted by Mo ion with energy of 94 keV, and fluence of Mo ion was 5 x 10(16) ions/cm(2). The second group of the samples was prepared only by IBAD under the same test temperature range. The Mo/ Si samples were analyzed by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), sheet resistance, nanohardness, and modulus of the Mo/ Si films were also measured. For the Mo/ Si films implanted with Mo ion, XRD results indicate that phase of the Mo/Si films prepared at 400 and 300 degrees C was pure MoSi2. Sheet resistance of the Mo/ Si films implanted with Mo ion was less than that of the Mo/Si films prepared without ion implantation. Nanohardness and modulus of the Mo/ Si films were obviously affected by test parameters. (C) 2007 Elsevier B. V. All rights reserved.