The efficiency of chemical mechanical or electrochemical mechanical planarization (CMP or ECMP) carried out in the fabrication of integrated circuits is largely governed by the functional chemicals used in these processes. In this work, we study the individual and combined chemical and electrochemical effects of a selected set of such chemicals that can potentially support both CMP and ECMP of copper. These chemicals include acetic acid (HAc) as a complexing agent, H2O2 as an oxidizer, and ammonium dodecyl sulfate (ADS) as a dissolution inhibitor. Surface passivating effects of ADS under both CMP (open circuit) and ECMP (voltage activated) conditions are compared with those of a standard dissolution inhibitor for Cu, benzotriazole (BTAH), and the combined effects of a BTAH - ADS mixture also are explored. The experiments are performed in the absence of mechanical polishing using static and rotating Cu disc electrodes, and electro-dissolution of Cu for ECMP is activated using a voltage pulse modulation technique. A mechanism of surface reactions is proposed to describe the relative roles of HAc, H2O2, ADS and BTAH as electrolyte components for CMP and ECMP of Cu. (C) 2007 Elsevier B. V. All rights reserved.