The crystallographic structure and morphology of Pb layers in their early stage of growth on Si( 3 3 5) surface are studied with Reflection High Electron Energy Diffraction (RHEED) and specific resistivity techniques. The vicinal Si( 3 3 5), with different surface morphology controlled by the amount of predeposited Au, was used as a substrate. Changes in the substrate morphology, from disordered step distribution through a perfectly ordered Si(335) to a hill-and-valley structure consisting of wide (111) terraces and high Miller index facets, cause switching between one- and two-dimensional growth of the Pb structures. (C) 2008 Elsevier B.V. All rights reserved.