화학공학소재연구정보센터
Advanced Materials, Vol.20, No.7, 1291-1291, 2008
Residual layer self-removal in imprint lithography
A new method for imprinting residual-layer free polymer micro- and nano structures, particularly 3-D structures with overhang, is demonstrated. This simple and versatile method induces self-removal of the residual layer by controlled failure of the patterned film along the edges of the imprinted features. Pristine overhang structures down to similar to 500 nm diameter are realized without exposure to plasma or chemical etchants.