The strain of Si1-xGex (x = 0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-xGex. Followed by oxidation and HF cleaning of Si1-xGex, epi-Si1-xGex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550 degrees C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-xGex for the substrate, the strain of deposited Si1-xGex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-xGex. (C) 2008 The Electrochemical Society.