We report the process for the atomic layer deposition (ALD) of silicon dioxide thin films on a silicon wafer by alternating exposures to Si2Cl6 and O-3. The deposition was governed by a self-limiting ALD reaction at 403-453 degrees C, and the growth rate at 453 degrees C was saturated at 0.32 nm/cycle for Si2Cl6 exposures over 1x10(8) L. However, at 471 degrees C or higher temperatures, the thermal decomposition of Si2Cl6 and the oxidation of Si by O-3 dominated the deposition, resulting in high growth rates and Si-rich films. The ALD films exhibited excellent electrical properties that were equivalent to those of low-pressure chemical vapor deposition films. (C) 2008 The Electrochemical Society.