Ba0.5Sr0.5TiO3 (BST) films, 600 A thick and 3 mol % Mn-doped, deposited on La0.68Ba0.32MnO3 (LBMO)-coated LaNiO3/Pt/Ti/SiO2/Si substrates exhibit elongation along the c-axis lattice. A suitable degree of lattice distortion of the BST films increases the dielectric constant. The nonlinear relationship between the dielectric constant and the applied bias voltage indicates that partially strained BST films on the LBMO buffer layers have ferroelectric properties. An LBMO buffer layer deposited at a higher growth temperature is comprised of larger grains, and therefore a rougher surface structure and increased leakage current of the deposited BST film.