The aim of this study was to propose a growth procedure for preparation of crack-free thick aluminum nitride (AlN) layers that can be easily separated from the substrate. The overall process is based on the physical vapor transport method employing a seed and a source material. In this case, the substrate is an epitaxial 4H-SiC layer and the growth of AlN is initiated at etch pits formed during the ramp up time prior to establishing growth temperature. Development of hexagonal pyramids on which arrays of microrods are formed is the core of the growth procedure. Free-standing wafers having 10 mm diameter and about 120 gm thick have been fabricated. (C) 2007 Elsevier B.V. All rights reserved.