The paper describes the method to grow homogeneous InxGa1-xSb ternary alloy bulk crystals. The InxGa1-xSb crystals were grown under a constant temperature gradient using InSb(seed)/Te-doped InSb/GaSb(feed) samples. The optimum cooling rate to grow homogeneous crystal was given by the product of the temperature gradient and the growth rate. The temperature gradient was estimated from the indium composition profile in the grown crystal. The thermal pulses were applied during the holding process to estimate the growth rate. The respective growth rates were 0.45 and 0.19 mm/h for indiurn compositions of 0.8 and 0.6. The homogeneous In0.8Ga0.2Sb and In0.6Ga0.4Sb crystals were grown by decreasing the temperature with an optimized cooling rate of 0.77 and 0.33 degrees C/h, respectively. (C) 2007 Elsevier B.V. All rights reserved.