Experimental and numerical results are presented demonstrating the impact of a traveling magnetic field (TMF) on the heat and mass transport in doped, VGF-grown Ge crystals. In growth with TMF a considerable effect on the deflection of the solid-liquid interface is observed, whereas the dopant segregation does not change significantly compared to the growth without field. Furthermore, pronounced striation patterns were found in the crystals indicating a time-dependent melt flow during growth. A combined TMF/DC field is presented which was developed to avoid this effect. Isothermal model experiments using a liquid GaInSn alloy show the capability of the DC field for an effective damping of fluctuations of the flow velocity in qualitative agreement with numerical results. (C) 2007 Elsevier B.V. All rights reserved.