화학공학소재연구정보센터
Journal of Crystal Growth, Vol.310, No.7-9, 2126-2133, 2008
3-D time-dependent numerical model of flow patterns within a large-scale Czochralski system
Silicon single crystals grown through the Czochralski (Cz) method have increased in size to 300 mm, resulting in the use of larger crucibles. The objective of this study is to investigate the continuous Cz method in a large crucible (800 mm), which is performed by inserting a polycrystalline silicon rod into the melt. The numerical model is based on a time-dependent and three-dimensional standard k-epsilon turbulent model using the analytical software package CFD-ACE+, version 2007. Wood's metal melt, which has a low melting point (Tm = 70 degrees C), was used as the modeling fluid. Crystal rotation given in the clockwise direction with rotation rates varying from 0 to 15 rpm, while the crucible was rotated counter-clockwise, with rotation rates between 0 and 3 rpm. The results show that asymmetrical phenomena of fluid flow arise as results of crystal and crucible rotation, and that these phenomena move with the passage of time. Near the crystal, the flow moves towards the crucible at the pole of the asymmetrical phenomena. Away from the poles, a vortex begins to form, which is strongly pronounced in the region between the poles. (C) 2007 Elsevier B.V. All rights reserved.