Single- and double-layer InAs/GaAs quantum dot structures with strain-reducing layers (SRLs) were prepared by metalorganic vapor-phase epitaxy using the Stranski-Krastanow growth mode. Structures were studied in-situ by reflectance anisotropy spectroscopy (RAS), and ex-situ by photoluminescence (PL). These structures, with very intense room temperature PL at wavelengths from 1.25 to 1.55 mu m according to growth and structure parameters, were grown along while monitored with RAS. Strong correlation between RAS signal and PL intensity was found. Dependence of PL emission maximum position on SRL composition and capping layer thickness is shown. (C) 2007 Elsevier B.V. All rights reserved.