Journal of Crystal Growth, Vol.310, No.7-9, 2284-2287, 2008
Growth and characterization of langasite-type Ba3TaGa3Si2O14 single crystals
Langasite-type crystals have excellent piezoelectric properties. Langasite-type Ba3TaGa3Si2O14 (BTGS) single crystals are grown from stoichiometric melt by the Czochralski method. The phase of as-grown crystals is characterized by X-ray powder diffraction. It is concluded from the X-ray diffraction (XRD) spectrum that the as-grown crystal is in single phase and the same structure with langasite. The lattice parameters of BTGS are calculated as follows: a = 0.8509 nm, c = 0.51815 nm. Its melting point is determined to at 1355 degrees C by the differential scanning calorimetry (DSC). DSC also shows that there is no phase transition from room temperature to its melting point. Transmittance spectra and the piezoelectric constant are characterized on X-cut samples cut from the boules. The k(12) and d(11) tested by the resonance method is 0.16 and 5.0 pC/N, respectively. The growth defects and the main issues related to growing a large bulk single crystal is discussed. (C) 2007 Elsevier B.V. All rights reserved.
Keywords:crystal structure;facet;X-ray diffraction;Czochralski method;gallium compounds;piezoelectric materials