We have fabricated LaNiO3 and BaTiO3 films using the rf sputtering method. The LaNiO3 were deposited on Si substrates, demonstrating a (1 0 0) highly oriented structure and nanocrystalline characteristic with a grain size of 30 nm. The BaTiO3 thin films were deposited on the LaNiO3 buffer layers, and have exhibited a (1 0 0) texture with a thickness of 400 rim. A smooth interface is obtained between the LaNiO3 bottom electrode and the BaTiO3 film from cross-section observations by scanning electron microscopy. The bi-layer films show a dense and column microstructure with a grain size of 60 nm. Ferroelectric characterizations have been obtained for the BaTiO3 films. The remnant polarization and coercive field are 2.1 mu C/cm(2) and 45 kV/cm, respectively. The leak current measurements have shown a good insulating property. (C) 2008 Elsevier B.V. All rights reserved.