Transparent electronics has been one of the key terminologies forecasting the ubiquitous technology era. Several researchers have thus extensively developed transparent oxide-based thin-film transistors (TFTs) on glass and plastic substrates. However, work in transparent electronics has been limited mostly to high-voltage devices operating at more than a few tens of volts, and has mainly focused on transparent display drivers. Low-voltage logic devices, such as transparent complementary inverters, operating in an electrically stable and photo-stable manner, are now very necessary to practically realize transparent electronics. Electrically stable dielectrics with high strength and high capacitance must also be proposed to support this mission, and simultaneously these dielectrics must be compatible with both n- and p- channel TFTs in device fabrication. Here, a nanohybrid dielectric layer that is composed of multiple units of inorganic oxide and organic self-assembled monolayer is proposel to support a transparent complementary TFT inverter operating at 3 V.