High-performance bipolar OFETs are fabricated using single-crystalline sub-micrometer-sized ribbons of CuPc and F16CuPc and the technique of an air-gap dielectric. Their similar energy levels to the work function of the Au electrodes, the high mobility of their single crystals, and the great advantages of the air-gap dielectric result in a high performance of the bipolar devices. The devices show excellent air-stable characteristics with electron and hole mobilities as high as 0.17 and 0.1 cm(2) V-1 s(-1), respectively.