Deep X-ray lithography (DXRL) allows the highly controlled patterning of mesoporous films (see figure). This technique requires no resist, enabling direct patterning without causing mesostructure degradation. Increase of silica polycondensation and partial removal of the templating agent is induced by synchrotron radiation. Selective functionalization of the mesoporous objects is achieved by combining DXRL with dip-pen writing.