Single-phase semiconducting iron disilicide (beta-FeSi2) films on silicon substrate were fabricated by electron beam evaporation (EBE) technique. For preventing the oxidation of Fe film, silicon/iron/silicon sandwich structure films with different thickness of silicon and iron were deposited and then annealed at different temperatures. X-ray diffraction (XRD), Raman and Fourier transform infrared spectroscopy (FTIR) measurements were carried out to study the phase distribution and crystal quality of the films. Single-phase beta-FeSi2 with high crystal quality was achieved after annealing at 800 degrees C for 5 h. An apparent direct bandgap E-g of approximately 0.85-0.88 eV was observed in the beta-FeSi2 films. It is considered that the silicon/iron/silicon sandwich structure is suited for formation of single-phase b-FeSi2 with high crystal quality. (C) 2008 Elsevier B.V. All rights reserved.