Mn/p-Si structures have been realised by electron beam evaporation of manganese on etched and cleaned p-Si wafers. Bilayer structures have been irradiated by swift heavy ions (of 100 MeV Fe7+ having a fluence of 1 x 10(13) ions/cm 2). The electronic transport features across the bilayer of the structure (i.e. I-V characteristics across the Mn/p-Si interface) show a significant increase of current (by two orders of magnitude) for the irradiated ones as compared to un-irradiated ones. I-V characteristics across the interface has also been recorded in presence of in-plane (i.e., along the plane of the interface) magnetic field which show a significant magnetic field sensitivity for the irradiated ones. The surface morphological studies from AFM show a granular structure with open face having micro-particles in it, prior to the irradiation and round shaped embedded granular structure after the irradiation. XRD data show the formation of manganese silicide (Mn5Si2). The results are understood in the realm of interfacial intermixing which is tailored by the swift heavy ion irradiation. (C) 2008 Elsevier B.V. All rights reserved.