The synthesis of combinatorial Bi-2 xSbxSe3 thin films by arrested precipitation technique ( APT) using triethanolamine-bismuth, triethanolamine-antimony and sodium selenosulphite as sources of Bi3+, Sb3+ and Se-2, respectively is investigated on commercial glass substrates. The growth mechanism of film formation, composition and surface morphology of the as deposited films were studied as a function of preparative parameters and bath composition. The films were monophasic, polycrystalline and covered the surface of the substrate completely. Energy dispersive X-ray analysis gave coherent elemental composition indicating single phase BiSbSe3 was made. The good results obtained for Bi-2 xSbxSe3 thin films revealed that arrested precipitation technique is best suited for the deposition of large area thin films on conducting/nonconducting substrates to produce materials for device applications. (C) 2008 Elsevier B. V. All rights reserved.