In2S3 layers have been grown by close-spaced evaporation of pre-synthesized In2S3 powder from its constituent elements. The layers were deposited on glass substrates at temperatures in the range, 200-350 degrees C. The effect of substrate temperature on composition, structure, morphology, electrical and optical properties of the as-grown indium sulfide films has been studied. The synthesized powder exhibited cubic structure with a grain size of 63.92 nm and S/In ratio of 1.01. The films grown at 200 degrees C were amorphous in nature while its crystallinity increased with the increase of substrate temperature to 300 degrees C. The films exhibited pure tetragonal beta-In2S3 phase at the substrate temperature of 350 degrees C. The surface morphological analysis revealed that the films grown at 300 degrees C had an average roughness of 1.43 nm. These films showed a S/In ratio of 0.98 and a lower electrical resistivity of 1.28 x 10(3) Omega cm. The optical band gap was found to be direct and the layers grown at 300 degrees C showed a higher optical transmittance of 78% and an energy band gap of 2.49 eV. (C) 2008 Elsevier B. V. All rights reserved.