We report in this paper the use of Co2Si silicide as a template layer for the integration of magnetic materials and structures on silicon substrate. By undertaking Co deposition on silicon at a temperature of about 300 degrees C, we show that it is possible to obtain a smooth and epitaxial Co2Si layer, which can act as a template layer preventing the reaction between Co and other transition metals with silicon. Two examples of over-growth of magnetic materials and structures on this template layer will be presented: growth of ferromagnetic Co layers and of magnetic tunnel junctions (Co(Fe)/AlOx/NiFe). (c) 2008 Elsevier B.V. All rights reserved.