p-Type ZnO: As films with a hole concentration of 10(16)-10(17) cm (3) and a mobility of 1.32-6.08 cm(2)/V s have been deposited on SiO2/Si substrates by magnetron sputtering. XRD, SEM, Hall measurements are used to investigate the structural and electrical properties of the films. A p-n homojunction comprising an undoped ZnO layer and a ZnO: As layer exhibits a typical rectifying behavior. Our study demonstrates a simple method to fabricate reproducible p-type ZnO film on the SiO2/Si substrate for the development of ZnO-based optoelectronic devices on Si-based substrates. (c) 2008 Elsevier B.V. All rights reserved.