The growth of Si oxide by means of a cyclic radio-frequency (rf) plasma oxidation process has been explored in a low temperature range of 100-200 degrees C. The growth mechanism exhibits Cabrera-Mott (CM) oxidation, that is, the transport of mobile ionic species is assisted by an electricfield. The low activation energy of 0.3 eV is attributed to the small size of O and the assistance of the electricfield. The oxide becomes off-stoichiometric as one approaches to the exterior surface of the oxide layer. (c) 2008 Elsevier B.V. All rights reserved.