Applied Surface Science, Vol.254, No.23, 7889-7892, 2008
Spatial imaging of valence band electronic structures in a GaSb/InAs quantum well
We measure local density of states (LDOS) for GaSb/InAs heterostructures with quantum wells in the valence band by scanning tunneling spectroscopy (STS) on the cleaved surface. Clear standingwave patterns of LDOS corresponding to the holes confined in the quantum wells are observed. (C) 2008 Elsevier B.V. All rights reserved.
Keywords:valence band;quantum well;scanning tunneling spectroscopy;local density of states;semiconductor heterostructures