Applied Surface Science, Vol.254, No.23, 7901-7904, 2008
Temperature dependence characterization of metal-insulator-nonuniformly-doped semiconductor solar cell
Four layered metal-insulator-pp(+) semiconductor MIS solar cell device was simulated using a comprehensive numerical model. The semiconductor layer was assumed to be nonuniformly-doped in which additional drift electric field inside the semiconductor could be generated. The effects of the electrostatic and kinetic properties of the electronic states at the insulator-semiconductor interface were taken into account. The influences of the operating temperature on the device performance were studied in detail. (C) 2008 Elsevier B.V. All rights reserved.
Keywords:MIS solar cell;nonuniform doping profile;temperature dependence;J-V characteristics;interface states